By Wolfgang Rainer Fahrner (auth.), Wolfgang Rainer Fahrner (eds.)
Amorphous Silicon/Crystalline Silicon sun Cells bargains with a few ordinary homes of heterojunction sunlight cells, similar to their heritage, the houses and the demanding situations of the cells, a few vital measurementtools, a few simulation courses and a quick survey of the cutting-edge, aiming to supply an preliminary framework during this box and function a prepared reference for all these drawn to the topic. This publication is helping to “fill within the blanks” on heterojunction sunlight cells. Readers will obtain a accomplished review of the foundations, buildings, processing options and the present developmental states of the units.
Prof. Dr. Wolfgang R. Fahrner is a professor on the college of Hagen, Germany and Nanchang college, China.
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Extra resources for Amorphous Silicon / Crystalline Silicon Heterojunction Solar Cells
It has to be mentioned that the process parameters have to be carefully adjusted to obtain such high-quality a-SiOx:H films. 4 eV, depending on the oxygen fraction in the precursor gas, is obtained by adding oxygen to the a-SiOx:H layers. The a-SiOx:H films exhibit a very low blue light absorption compared to a-Si:H(i) (cf. Fig. 31), enabling a thicker passivation layer than standard a-Si:H(i) and therefore an increasing passivation quality. Furthermore, the applicability of a-SiOx:H layers as a high-quality passivation scheme used in heterojunction solar cell fabrication is an effective alternative to standard a-Si:H(i) buffer layers.
As a consequence, it was recognized quite early that the p-type a-Si:H emitter on n-type substrates led to distinctly higher open-circuit voltages and hence higher efficiencies compared to n-type a-Si:H emitters on p-type substrates . This is due to the appearance of the larger band offset in the valence band than in the conduction band. The latter results in a more favorable band bending situation on both sides of a a-Si:H/c-Si heterojunction solar cell with n-type absorber: In the case of p-type a-Si:H on n-type c-Si (right), the built-in potential Ub p is larger than Up b in the inverse case, n-type a-Si:H on p-type c-Si resulting in a larger usable opencircuit voltage for this configuration.
B Interface state capacitance (Cit) versus frequency. 1 SiO2 and SiNx Passivation Schemes As described earlier, standard passivation schemes include high-quality SiO2 and SiNx films for high-efficiency device fabrication. 625 cm/s for a 90 X cm FZ n-type material and a 150 X cm FZ p-type material, respectively, passivated with annealed SiO2. Note that the values given are obtained using the effective lifetime at its maximum value, neglecting the choice of a discretionary injection level. 8 cm/s, respectively, for wafers passivated with SiO2.